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Advance Technical Information
GigaMOS TM TrenchT2
HiperFET TM
Power MOSFET
IXFK220N17T2
IXFX220N17T2
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
170V
220A
6.3m Ω
140ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
170
170
V
V
G
D
S
Tab
V GSS
V GSM
I D25
I L(RMS)
I DM
Continuous
Transient
T C = 25 ° C (Chip Capability)
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
± 20
± 30
220
160
550
V
V
A
A
A
PLUS247 (IXFX)
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
110
2
1250
A
J
W
G
D
S
Tab
dv/dt
T J
T JM
T stg
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
20
-55 ... +175
175
-55 ... +175
V/ns
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T L
T SOLD
M d
F C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
300
260
1.13/10
20..120 /4.5..27
10
6
° C
° C
Nm/lb.in.
N/lb.
g
g
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Applications
BV DSS
V GS = 0V, I D = 3mA
170
V
Synchronous Recification
V GS(th)
I GSS
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
2.5
5.0
± 200
V
nA
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 60A, Note 1
T J = 150 ° C
5.1
25 μ A
3 mA
6.3 m Ω
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS100230(01/10)
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